Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard's law

被引：132

作者：

Li, W

Pessa, M

Likonen, J

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

[2] Tech Res Ctr Finland, FIN-02044 Espoo, Finland

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 19期

关键词：

D O I：

10.1063/1.1370549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The N content and lattice parameter of GaN(x)As(1-x)epilayers on GaAs (0 < x < 0.03) were determined by secondary ion mass spectroscopy and x-ray diffraction measurements, respectively. A significant deviation of the lattice parameter variation in GaNxAs1-x from Vegard's law between GaAs and cubic GaN was observed, which leads to overestimation of the nitrogen content by up to 30% for x less than or equal to 2.5%. The physical origin of this negative deviation is discussed. (C) 2001 American Institute of Physics.

引用

收藏

页码：2864 / 2866

页数：3

相关论文

共 11 条

[1] LUMINESCENCE QUENCHING AND THE FORMATION OF THE GAP1-XNX ALLOY IN GAP WITH INCREASING NITROGEN-CONTENT [J].

BAILLARGEON, JN ;

CHENG, KY ;

HOFLER, GE ;

PEARAH, PJ ;

HSIEH, KC .

APPLIED PHYSICS LETTERS, 1992, 60 (20) :2540-2542

[2] Effects of atomic short-range order on the electronic and optical properties of GaAsN, GaInN, and GaInAs alloys [J].

Bellaiche, L ;

Zunger, A .

PHYSICAL REVIEW B, 1998, 57 (08) :4425-4431

[3]

EGOROV A, 1999, ELECTRON LETT, V35, P1251

[4] GaInAsN/GaAs laser diodes operating at 1.52μm [J].

Fischer, M ;

Reinhardt, M ;

Forchel, A .

ELECTRONICS LETTERS, 2000, 36 (14) :1208-1209

[5] GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GANXAS1-X USING A N RADICAL AS THE N-SOURCE [J].

KONDOW, M ;

UOMI, K ;

HOSOMI, K ;

MOZUME, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (8A) :L1056-L1058

[6] Effects of rapid thermal annealing on strain-compensated GaInNAs/GaAsP quantum well structures and lasers [J].

Li, W ;

Turpeinen, J ;

Melanen, P ;

Savolainen, P ;

Uusimaa, P ;

Pessa, M .

APPLIED PHYSICS LETTERS, 2001, 78 (01) :91-92

[7]

LI W, UNPUB

[8] METALORGANIC VAPOR-PHASE EPITAXY OF GAP1-XNX ALLOYS ON GAP [J].

MIYOSHI, S ;

YAGUCHI, H ;

ONABE, K ;

ITO, R ;

SHIRAKI, Y .

APPLIED PHYSICS LETTERS, 1993, 63 (25) :3506-3508

[9]

SPRUYTTE SG, 2000, UNPUB P 11 INT C MOL

[10] Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements [J].

Uesugi, K ;

Morooka, N ;

Suemune, I .

APPLIED PHYSICS LETTERS, 1999, 74 (09) :1254-1256