Effects of rapid thermal annealing on strain-compensated GaInNAs/GaAsP quantum well structures and lasers

被引：59

作者：

Li, W ^{[1
]}

Turpeinen, J ^{[1
]}

Melanen, P ^{[1
]}

Savolainen, P ^{[1
]}

Uusimaa, P ^{[1
]}

Pessa, M ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 01期

关键词：

D O I：

10.1063/1.1337624

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strain-compensated GaInNAs/GaAsP quantum well structures and lasers were grown by gas-source molecular beam epitaxy using a rf-plasma nitrogen radical beam source. Effects of rapid thermal annealing on the optical properties of GaInNAs/GaAsP quantum well structures as well as laser diodes were examined. It was found to significantly increase the photoluminescence from the quantum wells and reduce the threshold current density of the lasers, mainly due to a removal of N-induced nonradiative centers from GaInNAs wells. (C) 2001 American Institute of Physics.

引用

页码：91 / 92

页数：2

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