Towards high performance GaInAsN/GaAsN laser diodes in 1.5 μm range

被引:30
作者
Gollub, D
Fischer, M
Forchel, A
机构
[1] Nanosyst & Technol GmbH, D-97218 Gerbunn, Germany
[2] Univ Wurzburg, D-97074 Wurzburg, Germany
关键词
D O I
10.1049/el:20020812
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
GaInAsN/GaAsN/AlGaAs double quantum well lasers with emission at 1.49 mum grown by solid source molecular beam epitaxy is investigated. The devices show the lowest threshold currents (120 mA) and highest output powers (130 mW pulsed) reported to date for GaAs-based 1.5 mum lasers.
引用
收藏
页码:1183 / 1184
页数:2
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