1.3 μm GaInAsN laserdiodes with improved high temperature performance

被引：24

作者：

Fischer, M

Gollub, D

Forchel, A

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

[2] Nanoplus Nanosyst & Technol GMBH, D-97218 Gerbrunn, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 2B期

关键词：

GaInAsN; semiconductor lasers; quantum well lasers; laserdiodes; telecommunication; optical fiber communication; MBE;

D O I：

10.1143/JJAP.41.1162

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown 1.3 mutm GaInAsN/GaAs single-quantum-well (SQW) laser structures by solid source molecular beam epitaxy using an RF plasma source for the generation of active nitrogen. For p-type doping Carbon is used. Ridge waveguide lasers show threshold currents of 21 mA and a slope efficiency of 0.52 W/A. Device operation up to temperatures of 150 degreesC (limited by our set-up for temperature variation) is demonstrated. Between 20 and 80degreesC we observe for a constant drive current of 90 mA a reduction in output power of less than 2 dB. The threshold current variation with temperature yields a T-0 of 158 K for temperatures between 20 and 110degreesC.

引用

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页码：1162 / 1163

页数：2

相关论文

共 10 条

[1] GaInAsN/GaAs laser diodes operating at 1.52μm [J].

Fischer, M ;

Reinhardt, M ;

Forchel, A .

ELECTRONICS LETTERS, 2000, 36 (14) :1208-1209

[2] OC-48 capable InGaAsN vertical cavity lasers [J].

Jackson, AW ;

Naone, RL ;

Dalberth, MJ ;

Smith, JM ;

Malone, KJ ;

Kisker, DW ;

Klem, JF ;

Choquette, KD ;

Serkland, DK ;

Geib, KM .

ELECTRONICS LETTERS, 2001, 37 (06) :355-356

[3] Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition [J].

Kawaguchi, M ;

Gouardes, E ;

Schlenker, D ;

Kondo, T ;

Miyamoto, T ;

Koyama, F ;

Iga, K .

ELECTRONICS LETTERS, 2000, 36 (21) :1776-1777

[4] A 1.3-μm GaInNAs/GaAs single-quantum-well laser diode with a high characteristic temperature over 200 K [J].

Kitatani, T ;

Nakahara, K ;

Kondow, M ;

Uomi, K ;

Tanaka, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (2A) :L86-L87

[5] GaInNAs: A novel material for long-wavelength semiconductor lasers [J].

Kondow, M ;

Kitatani, T ;

Nakatsuka, S ;

Larson, MC ;

Nakahara, K ;

Yazawa, Y ;

Okai, M ;

Uomi, K .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) :719-730

[6] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].

Kondow, M ;

Uomi, K ;

Niwa, A ;

Kitatani, T ;

Watahiki, S ;

Yazawa, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275

[7] 8W continuous wave operation of InGaAsN lasers at 1.3μm [J].

Livshits, DA ;

Egorov, AY ;

Riechert, H .

ELECTRONICS LETTERS, 2000, 36 (16) :1381-1382

[8] Low threshold and high characteristic temperature 1.3 μm range GaInNAs lasers grown by metalorganic chemical vapor deposition [J].

Sato, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (6A) :3403-3405

[9] 1.3 μm continuous-wave operation of GainNAs lasers grown by metal organic chemical vapour deposition [J].

Sato, S ;

Satoh, S .

ELECTRONICS LETTERS, 1999, 35 (15) :1251-1252

[10] Monolithic VCSEL with InGaAsN active region emitting at 1.28μm and CW output power exceeding 500μW at room temperature [J].

Steinle, G ;

Riechert, H ;

Egorov, AY .

ELECTRONICS LETTERS, 2001, 37 (02) :93-95