High performance 1.28 μm GaLnNAs double quantum well lasers

被引：20

作者：

Wei, YQ ^{[1
]}

Sadeghi, M ^{[1
]}

Wang, SM ^{[1
]}

Modh, P ^{[1
]}

Larsson, A ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci MC2, Photon Lab, SE-41296 Gothenburg, Sweden

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 24期

关键词：

D O I：

10.1049/el:20053210

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of multiple quantum wells and GaAs barriers favours the temperature stability and modulation bandwidth of GaInNAs lasers. It is shown that a very low threshold current density and a high characteristic temperature can be achieved for GaInNAs/GaAs double quantum well lasers, emitting at 1.28 mu m, when grown by molecular beam epitaxy under favourable conditions.

引用

页码：1328 / 1330

页数：3

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