Very low threshold current density 1.3 μm GaInNAs single-quantum well lasers grown by molecular beam epitaxy

被引：35

作者：

Wang, SM ^{[1
]}

Wei, YQ ^{[1
]}

Wang, XD ^{[1
]}

Zhao, Q ^{[1
]}

Sadeghi, M ^{[1
]}

Larsson, A ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microelect & Nanosci, Photon Lab, SE-41296 Gothenburg, Sweden

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期

关键词：

low-dimensional structures; molecular beam epitaxy; semiconductor III-V materials; laser diodes;

D O I：

10.1016/j.jcrysgro.2004.12.150

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report molecular beam epitaxy (MBE) growth and device performance of 1.3μ m GaInNAs/GaNAs singlequantum well lasers on GaAs substrates. Record low threshold current densities of 300, 320 and 360A/cm(2) for cavity lengths of 1200, 1000 and 800 μ m, respectively, and a transparency current density of only 84 A/cm(2) are achieved for the 100 put wide broad area lasers. A characteristic temperature of 108 K is measured in the temperature range of 8-70 ° C for a laser with a cavity length of 1000 μ m. We find that optimization of the RF nitrogen source during the MBE growth plays a crucial role in reducing the threshold current density. © 2005 Elsevier B.V. All rights reserved.

引用

页码：734 / 738

页数：5

共 9 条

[1] Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 μm [J].

Ha, W ;

Gambin, V ;

Wistey, M ;

Bank, S ;

Kim, S ;

Harris, JS .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (05) :591-593

[2] Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 μm [J].

Höhnsdorf, F ;

Koch, J ;

Leu, S ;

Stolz, W ;

Borchert, B ;

Druminski, M .

ELECTRONICS LETTERS, 1999, 35 (07) :571-572

[3] Lasing characteristics of low-threshold GaInNAs lasers grown by metalorganic chemical vapor deposition [J].

Kawaguchi, M ;

Miyamoto, T ;

Gouardes, E ;

Schlenker, D ;

Kondo, T ;

Koyama, F ;

Iga, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (7B) :L744-L746

[4] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].

Kondow, M ;

Uomi, K ;

Niwa, A ;

Kitatani, T ;

Watahiki, S ;

Yazawa, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275

[5] Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy [J].

Li, W ;

Jouhti, T ;

Peng, CS ;

Konttinen, J ;

Laukkanen, P ;

Pavelescu, EM ;

Dumitrescu, M ;

Pessa, M .

APPLIED PHYSICS LETTERS, 2001, 79 (21) :3386-3388

[6] 8W continuous wave operation of InGaAsN lasers at 1.3μm [J].

Livshits, DA ;

Egorov, AY ;

Riechert, H .

ELECTRONICS LETTERS, 2000, 36 (16) :1381-1382

[7] 1.32-μm GaInNAs-GaAs laser with a low threshold current density [J].

Peng, CS ;

Jouhti, T ;

Laukkanen, P ;

Pavelescu, EM ;

Konttinen, J ;

Li, W ;

Pessa, M .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (03) :275-277

[8] Low threshold and high characteristic temperature 1.3 μm range GaInNAs lasers grown by metalorganic chemical vapor deposition [J].

Sato, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (6A) :3403-3405

[9] Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers [J].

Tansu, N ;

Kirsch, NJ ;

Mawst, LJ .

APPLIED PHYSICS LETTERS, 2002, 81 (14) :2523-2525

← 1 →