Crystallization in amorphous silicon

被引：3

作者：

Chen, LJ ^{[1
]}

Cheng, SL ^{[1
]}

Lin, HH ^{[1
]}

Chi, KS ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2002年 / 16卷 / 1-2期

关键词：

D O I：

10.1142/S021797920200938X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-resolution transmission electron microscopy (HRTEM) in conjunction with auto-correlation function (ACF) analysis has been applied to investigate the crystallization processes in amorphous silicon. For both electron beam evaporated and ion implanted amorphous silicon thin films, a high density of Si nanocrystallites was detected in as-deposited films. The density was found to diminish in amorphous films with annealing temperature first then increase. The conclusions are discussed in the context of free energy change with annealing temperature.

引用

页码：1 / 8

页数：8

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