Controlled aggregation of magnetic ions in a semiconductor: An experimental demonstration

被引:100
作者
Bonanni, A. [1 ]
Navarro-Quezada, A. [1 ]
Li, Tian [1 ]
Wegscheider, M. [1 ,3 ]
Matej, Z. [2 ,3 ]
Holy, V. [2 ]
Lechner, R. T. [1 ]
Bauer, G. [1 ]
Rovezzi, M.
D'Acapito, F.
Kiecana, M. [4 ]
Sawicki, M. [4 ]
Dietl, T. [4 ,5 ]
机构
[1] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria
[2] Charles Univ Prague, Dept Condensed Matter Phys, CZ-12116 Prague, Czech Republic
[3] GILDA CRG ESRF, INFM OGG, F-38043 Grenoble, France
[4] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[5] Univ Warsaw, Inst Theoret Phys, PL-00681 Warsaw, Poland
基金
奥地利科学基金会;
关键词
D O I
10.1103/PhysRevLett.101.135502
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The control on the distribution of magnetic ions into a semiconducting host is crucial for the functionality of magnetically doped semiconductors. Through a structural analysis at the nanoscale, we give experimental evidence that the aggregation of Fe ions in (Ga,Fe)N and consequently the magnetic response of the material are affected by the growth rate and doping with shallow impurities.
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页数:4
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