Enhanced intersubband absorption in stepped double barrier quantum wells

被引：3

作者：

Lai, KT

Haywood, SK

Gupta, R

Missous, M

机构：

[1] Univ Hull, Dept Engn, Kingston Upon Hull HU6 7RX, N Humberside, England

[2] UMIST, Dept Elect Engn & Electron, Manchester M60 1QD, Lancs, England

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 11期

关键词：

D O I：

10.1049/el:20020261

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Intersubband absorption is measured in the conduction band of GaAs and stepped GaAs/InxGa1-xAs multiple-quantum-wells confined by narrow AlAs barriers. Enhanced absorption from n = 1 to n = 2 is observed in the stepped wells. This is attributed to relaxation of the intersubband polarisation selection rule.

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页码：529 / 530

页数：2

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