MIDWAVELENGTH INFRARED DETECTION WITH INXGA1-XAS/AL0.45GA0.55AS MULTIPLE-QUANTUM-WELL STRUCTURES

被引：12

作者：

LENCHYSHYN, LC ^{[1
]}

LIU, HC ^{[1
]}

BUCHANAN, M ^{[1
]}

WASILEWSKI, ZR ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA,ON K1A 0R6,CANADA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 01期

关键词：

D O I：

10.1088/0268-1242/10/1/007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the detection of mid-wavelength (3-5 mum) infrared radiation by intersubband transitions in In(x)Ga1-xAs/Al0.45Ga0.55As multiple quantum well structures grown on GaAs substrates. The peak detector response is shifted from 4.8 to 4.3 mum by increasing the indium fraction from x = 0.05 to x = 0.20, while simultaneously decreasing the well width to keep the first excited eigenstate near the top of the wells. These detectors can be combined in detector stacks with conventional long-wavelength (8-12 mum) infrared quantum well detectors for multi-band imaging applications.

引用

页码：45 / 48

页数：4

共 15 条

[1] STRAINED INGAAS/ALGAAS QUANTUM-WELL INFRARED DETECTORS AT 4.5 MU-M [J].

FIORE, A ;

ROSENCHER, E ;

BOIS, P ;

NAGLE, J ;

LAURENT, N .

APPLIED PHYSICS LETTERS, 1994, 64 (04) :478-480

[2] MIDINFRARED DETECTORS IN THE 3-5 MU-M BAND USING BOUND TO CONTINUUM STATE ABSORPTION IN INGAAS/INALAS MULTIQUANTUM WELL STRUCTURES [J].

HASNAIN, G ;

LEVINE, BF ;

SIVCO, DL ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1990, 56 (08) :770-772

[3] QUANTUM-WELL INFRARED PHOTODETECTORS [J].

LEVINE, BF .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (08) :R1-R81

[4] PHOTOVOLTAIC GAAS QUANTUM-WELL INFRARED DETECTORS AT 4.2 MU-M USING INDIRECT ALXGA1-X BARRIERS [J].

LEVINE, BF ;

GUNAPALA, SD ;

KOPF, RF .

APPLIED PHYSICS LETTERS, 1991, 58 (14) :1551-1553

[5] DARK CURRENT IN QUANTUM-WELL INFRARED PHOTODETECTORS [J].

LIU, HC ;

STEELE, AG ;

BUCHANAN, M ;

WASILEWSKI, ZR .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (04) :2029-2031

[6] SEGREGATION OF SI DELTA-DOPING IN GAAS-ALGAAS QUANTUM-WELLS AND THE CAUSE OF THE ASYMMETRY IN THE CURRENT-VOLTAGE CHARACTERISTICS OF INTERSUBBAND INFRARED DETECTORS [J].

LIU, HC ;

WASILEWSKI, ZR ;

BUCHANAN, M ;

CHU, HY .

APPLIED PHYSICS LETTERS, 1993, 63 (06) :761-763

[7] MULTICOLOR VOLTAGE-TUNABLE QUANTUM-WELL INFRARED PHOTODETECTOR [J].

LIU, HC ;

LI, JM ;

THOMPSON, JR ;

WASILEWSKI, ZR ;

BUCHANAN, M ;

SIMMONS, JG .

IEEE ELECTRON DEVICE LETTERS, 1993, 14 (12) :566-568

[8] DEPENDENCE OF ABSORPTION-SPECTRUM AND RESPONSIVITY ON THE UPPER STATE POSITION IN QUANTUM-WELL INTERSUBBAND PHOTODETECTORS [J].

LIU, HC .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (06) :3062-3067

[9] LOW DARK CURRENT DUAL-BAND INFRARED PHOTODETECTOR USING THIN ALAS BARRIERS AND GAMMA-X MIXED INTERSUBBAND TRANSITION IN GAAS QUANTUM-WELLS [J].

LIU, HC ;

WILSON, PH ;

LAMM, M ;

STEELE, AG ;

WASILEWSKI, ZR ;

LI, JM ;

BUCHANAN, M ;

SIMMONS, JG .

APPLIED PHYSICS LETTERS, 1994, 64 (04) :475-477

[10]

Manasreh M. O., 1993, SEMICONDUCTOR QUANTU

← 1 2 →