High-power interband cascade lasers with quantum efficiency > 450%

被引：31

作者：

Yang, RQ ^{[1
]}

Bruno, JD ^{[1
]}

Bradshaw, JL ^{[1
]}

Pham, JT ^{[1
]}

Wortman, DE ^{[1
]}

机构：

[1] USA, Res Lab, Adelphi, MD 20783 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 15期

关键词：

D O I：

10.1049/el:19990880

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mid-IR (3.8-3.9 mu m) interband cascade lasers based on InAs/GaInSb heterostructures have been demonstrated at temperatures up to 210K. The authors have observed a peak optical output power of similar to 2W/facet from one device at 80K, and from another device at 150K, a slope of 735mW/A per facet, corresponding to a differential external quantum efficiency of 456%.

引用

页码：1254 / 1255

页数：2

共 7 条

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High-power interband cascade lasers with quantum efficiency &gt; 450%

High-power interband cascade lasers with quantum efficiency > 450%