Scanning tunneling microscopy study of the Si(111)-(root 3x root 3)-Pb mosaic phase

被引：34

作者：

GomezRodriguez, JM ^{[1
]}

Veuillen, JY ^{[1
]}

Cinti, RC ^{[1
]}

机构：

[1] CNRS,ETUD PROPRIETES ELECT SOLIDES LAB,F-38042 GRENOBLE 9,FRANCE

来源：

SURFACE SCIENCE | 1997年 / 377卷 / 1-3期

关键词：

epitaxy; growth; scanning tunneling microscopy; scanning tunneling spectroscopies; silicon; surface electronic phenomena; surface structure; morphology; roughness and topography;

D O I：

10.1016/S0039-6028(97)01325-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The atomic and electronic structure of the Pb-induced (root 3 x root 3)R30 mosaic phase on Si(111) substrates has been studied by means of scanning tunneling microscopy (STM). A systematic voltage dependent STM imaging analysis combined with scanning tunneling spectroscopy measurements have enabled us to interpret the different height contrast between Si and Pb adatoms observed on STM images. This contrast difference may be attributed to a large charge-transfer between the different adatom dangling-bond orbitals.

引用

页码：45 / 49

页数：5

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