PZT BULK ACOUSTIC WAVE RESONATORS FOR MMIC TECHNOLOGY

被引:6
作者
Arscott, S. [1 ]
Awang, Z. [3 ]
Tu, Y. L. [2 ]
Milne, S. J. [2 ]
Miles, R. E. [1 ]
机构
[1] Univ Leeds, Dept Elect & Elect Engn, Microwave & Terahertz Technol Grp, Leeds LS2 9JT, W Yorkshire, England
[2] Univ Leeds, Sch Mat, Leeds LS2 9JT, W Yorkshire, England
[3] Inst Teknol MARA, Shah Alam 40450, Selangor, Malaysia
关键词
D O I
10.1080/00150199608244843
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films of the piezoelectric ceramic lead zirconate titanate (PZT) have been prepared using sol-gel processing techniques. PZT can be used as the dielectric material in bulk acoustic wave (BAW) resonator devices which can operate at microwave frequencies. Coupled with the relative ease of sol-gel processing, these structures have the potential of being readily incorporated into existing monolithic microwave integrated circuit (MMIC) technology. The thin films were prepared via a novel sol-gel route based on a l, 3-propanediol solvent with up to 1 mu m thickness obtained by a single sol coating deposited on Pt/Ti coated oxidized silicon substrates. Films annealed in a conventional furnace at 700 degrees C for 30 minutes were seen to fully crystallize into the required perovskite phase and showed excellent ferroelectric behaviour, demonstrated by reproducible hysteresis loops (P(r) = 25 mu C/cm(2), E(c) = 4.5MV/m). Microwave measurements were performed on wedge shaped samples obtained via a combination of etching and polishing procedures. This resulted in a BAW structure with approximately 10 mu m of silicon wafer left beneath the device. Fundamental series and parallel resonances were observed at 0.073GHz and 0.111GHz respectively. The unloaded Q value for the parallel resonance was Seen to be similar to 1000. We have shown that BAW microwave devices composed of PZT are feasible.
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页码:49 / 56
页数:8
相关论文
共 15 条
[1]  
[Anonymous], P IEEE 36 ANN FREQ C
[2]  
[Anonymous], 1975, Landolt-Bornstein New series: Ferroelectric and Antiferroelectric, V9, P119, Patent No. 91144766
[3]  
Awang Z., IN PRESS
[4]   PHYSICAL CHARACTERIZATION OF PB1ZR0.2TI0.8O3 PREPARED BY THE SOL-GEL PROCESS [J].
BOZACK, MJ ;
WILLIAMS, JR ;
FERRARO, JM ;
FENG, ZC ;
JONES, RE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (02) :485-491
[5]  
Brinker C. J., SOL GEL SCI PHYS CHE
[6]   PREPARATION OF FERROELECTRIC PZT FILMS BY THERMAL-DECOMPOSITION OF ORGANOMETALLIC COMPOUNDS [J].
FUKUSHIMA, J ;
KODAIRA, K ;
MATSUSHITA, T .
JOURNAL OF MATERIALS SCIENCE, 1984, 19 (02) :595-598
[7]   EFFECTS OF SUBSTRATE AND BOTTOM ELECTRODES ON THE PHASE-FORMATION OF LEAD-ZIRCONATE-TITANATE THIN-FILMS PREPARED BY THE SOL-GEL METHOD [J].
KIM, CJ ;
YOON, DS ;
LEE, JS ;
CHOI, CG ;
NO, KS .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (5A) :2675-2678
[8]   1.0-GHZ THIN-FILM BULK ACOUSTIC-WAVE RESONATORS ON GAAS [J].
KLINE, GR ;
LAKIN, KM .
APPLIED PHYSICS LETTERS, 1983, 43 (08) :750-751
[9]   RF PLANAR MAGNETRON SPUTTERING AND CHARACTERIZATION OF FERROELECTRIC PB(ZR,TI)O3 FILMS [J].
KRUPANIDHI, SB ;
MAFFEI, N ;
SAYER, M ;
ELASSAL, K .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6601-6609
[10]   PIEZOELECTRIC PROPERTIES OF SOL-GEL-DERIVED FERROELECTRIC AND ANTIFERROELECTRIC THIN-LAYERS [J].
LI, JF ;
VIEHLAND, DD ;
TANI, T ;
LAKEMAN, CDE ;
PAYNE, DA .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) :442-448