Structural and photonic properties of Opal-GaN nanocomposites

被引：14

作者：

Golubev, VG ^{[1
]}

Kurdyukov, DA

Medvedev, AV

Pevtsov, AB

Sorokin, LM

Hutchison, JL

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

来源：

SEMICONDUCTORS | 2001年 / 35卷 / 11期

关键词：

D O I：

10.1134/1.1418079

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electron microscopic methods have been applied to demonstrate that gallium nitride synthesized in opal voids has perfect crystal structure. Studies of optical reflection spectra revealed that the obtained opal-< gallium nitride > nanocomposites retain the photonic-crystal properties of the ordered host matrix at any (0-100%) degree of opal void filling with gallium nitride. (C) 2001 MAIK "Nauka/ Interperiodica".

引用

页码：1320 / 1323

页数：4

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