Broadband quantum well infrared photodetectors

被引:2
作者
Li, SS [1 ]
Chu, J [1 ]
Chiang, JC [1 ]
Lee, JH [1 ]
Singh, A [1 ]
机构
[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA
来源
PHOTODETECTORS: MATERIALS AND DEVICES IV | 1999年 / 3629卷
关键词
quantum well infrared photodetectors (QWIPs); broadband (BB); intersubband transition; dark current; peak responsivity; detectivity; LWIR; InGaAs; AlGaAs;
D O I
10.1117/12.344551
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Typical quantum well infrared photodetectors (QWIPs) exhibit rather narrow spectral bandwidth of 1 to 2 mu m. For certain applications, such as spectroscopy, sensing of a broader range of infrared radiation is highly desirable. In this work, we report the design of five broadband (BB-) QWIPs sensitive over the 7 to 14 mu m spectral range. Three n-type BB-QWIPs consisting of three, four, and five quantum wells of different thickness and/or composition in a unit cell, which are then repeated 20 times for the three and four quantum wells (QW) devices and 3 times for the five QWs device to create the BB-QWIP structures, are demonstrated. The three-well n-type InxGa1-xAs/AlyGa1-yAs BB-QWIP is designed to have a response peak at 10 mu m, with a FWHM bandwidth that varies with the applied bias. A maximum bandwidth of Delta lambda/lambda(p) = 21 % was obtained for this device at V-b = -2 V. The four-well n-type InxGa1-xAs/GaAs BB-QWIP not only exhibits a very large responsivity of 2.31 A/W at 10.3 mu m and V-b = +4.5 V, but also achieves a broader bandwidth of Delta lambda/lambda(p) = 29 % than the three-well device. The five-well n-type InxGa1-xAs/GaAs BB-QWIP has achieved a FWHM bandwidth of Delta lambda/lambda(p) = 28 % at V-b = 1.75 V. In addition, two p-type InxGa1-xAs/GaAs BB-QWIPs with variable well thickness and composition, sensitive in the 7 - 14 mu m spectral range, are also demonstrated. The variable composition p-type BB-QWIP has a very large FWHM bandwidth of Delta lambda/lambda(p) = 48 % at V-b = -1.5 V and T = 40 K. The variable thickness p-type BB-QWIP was found to have an even broader FWHM bandwidth of Delta lambda/lambda(p) = 63 % at V-b = 1.1 V and T = 40 K, with a corresponding peak responsivity of 25 mA/W at 10.2 mu m. The results reveal that p-type BB-QWIPs have a broader and flatter spectral bandwidth but lower responsivity than that of n-type BB-QWIPs under similar operating conditions.
引用
收藏
页码:138 / 146
页数:9
相关论文
共 20 条
[1]   INTERSUBBAND ABSORPTION IN HIGHLY STRAINED INGAAS/INALAS MULTIQUANTUM WELLS [J].
ASAI, H ;
KAWAMURA, Y .
APPLIED PHYSICS LETTERS, 1990, 56 (08) :746-748
[2]   10-16 μm broadband quantum well infrared photodetector [J].
Bandara, SV ;
Gunapala, SD ;
Liu, JK ;
Luong, EM ;
Mumolo, JM ;
Hong, W ;
Sengupta, DK ;
McKelvey, MJ .
APPLIED PHYSICS LETTERS, 1998, 72 (19) :2427-2429
[3]   A voltage-tunable multicolor triple-coupled InGAs/GaAs/AlGaAs quantum-well infrared photodetector for 8-12 mu m detection [J].
Chiang, JC ;
Li, SS ;
Tidrow, MZ ;
Ho, P ;
Tsai, M ;
Lee, CP .
APPLIED PHYSICS LETTERS, 1996, 69 (16) :2412-2414
[4]   The growth and characterization of two new P-type compressively strained layer InGaAs/AlGaAs/GaAs quantum well infrared photodetectors for mid- and long-wavelength infrared detection [J].
Chu, J ;
Li, SS ;
Ho, P .
JOURNAL OF CRYSTAL GROWTH, 1997, 175 :964-970
[5]   The effect of compressive strain on the performance of p-type quantum-well infrared photodetectors [J].
Chu, J ;
Li, SS .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (07) :1104-1113
[6]   A NOVEL NUMERICAL TECHNIQUE FOR SOLVING THE ONE-DIMENSIONAL SCHROEDINGER EQUATION USING MATRIX APPROACH - APPLICATION TO QUANTUM WELL STRUCTURES [J].
GHATAK, AK ;
THYAGARAJAN, K ;
SHENOY, MR .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (08) :1524-1531
[7]   Long-Wavelength Quantum Well Infrared Photodetector (QWIP) research at Jet Propulsion Laboratory [J].
Gunapala, SD ;
Liu, JK ;
Sundaram, M ;
Bandara, SV ;
Shott, CA ;
Hoelter, T ;
Maker, PD ;
Muller, RE .
INFRARED TECHNOLOGY AND APPLICATIONS XXII, 1996, 2744 :722-730
[8]   ELECTRON AND HOLE MOBILITY IN MODULATION DOPED GAINAS-AIINAS STRAINED LAYER SUPERLATTICE [J].
HIROSE, K ;
MIZUTANI, T ;
NISHI, K .
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :130-135
[9]   OPTICAL INVESTIGATION OF HIGHLY STRAINED INGAAS-GAAS MULTIPLE QUANTUM-WELLS [J].
JI, G ;
HUANG, D ;
REDDY, UK ;
HENDERSON, TS ;
HOUDRE, R ;
MORKOC, H .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) :3366-3373
[10]   NOVEL DIFFERENTIALLY STRAINED P-DOPED QUANTUM-WELL INFRARED DETECTOR [J].
KURODA, RT ;
GARMIRE, E .
INFRARED PHYSICS, 1993, 34 (02) :153-161