Magnetoresistance in nanocontacts induced by magnetostrictive effects

被引：51

作者：

Gabureac, M ^{[1
]}

Viret, M

Ott, F

Fermon, C

机构：

[1] CEA Saclay, Serv Phys Etat Condense, DSM,DRECAM, CNRS,URA 2464, F-91191 Gif Sur Yvette, France

[2] CEA Saclay, CNRS, UMR 12, Leon Brillouin Lab, F-91191 Gif Sur Yvette, France

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.69.100401

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nickel atomic contacts made with the break junction technique have been subject to a magnetic field while monitoring their resistance. Large resistance changes with the angle between the applied field and the contact direction can be explained by modifications of the contact geometry induced by magnetostriction.

引用

页数：4

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