Controlled Synthesis of Large-Scale, Uniform, Vertically Standing Graphene for High-Performance Field Emitters

被引：189

作者：

Jiang, Lili ^{[1
]}

Yang, Tianzhong ^{[1
]}

Liu, Fei ^{[2
,3
]}

Dong, Jing ^{[4
]}

Yao, Zhaohui ^{[4
]}

Shen, Chengmin ^{[1
]}

Deng, Shaozhi ^{[2
,3
]}

Xu, Ningsheng ^{[2
,3
]}

Liu, Yunqi ^{[5
]}

Gao, Hong-Jun ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[2] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

[3] Sun Yat Sen Univ, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China

[4] Tsinghua Univ, Sch Aerosp, Beijing 100084, Peoples R China

[5] Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 02期

关键词：

vertically standing graphene; copper; microwave-plasma chemical vapor deposition; growth mechanisms; field emission; EMISSION; GROWTH; TRANSISTORS; NUCLEATION; GRAPHITE; ARRAYS; FILMS;

D O I：

10.1002/adma.201203902

中图分类号：

O6 [化学];

学科分类号：

070301 [无机化学];

摘要：

Large-scale, uniform, vertically standing graphene with atomically thin edges are controllably synthesized on copper foil using a microwave-plasma chemical vapor deposition system. A growth mechanism for this system is proposed. This film shows excellent field-emission properties, with low turn-on field of 1.3 V μm-1, low threshold field of 3.0 V μm -1 and a large field-enhancement factor more than 10 000. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：250 / 255

页数：6

共 30 条

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