Preparation of 4-inch Ir/YSZ/Si(001) substrates for the large-area deposition of single-crystal diamond

被引：47

作者：

Fischer, M. ^{[1
]}

Gsell, S. ^{[1
]}

Schreck, M. ^{[1
]}

Brescia, R. ^{[1
]}

Stritzker, B. ^{[1
]}

机构：

[1] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

来源：

关键词：

heteroepitaxy; iridium; YSZ; wafers; bias enhanced nucleation;

D O I：

10.1016/j.diamond.2008.02.028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond/Ir/YSZ/Si(001) is currently the most promising multilayer structure for the future realisation of large-area diamond single crystals. A decisive key is the preparation of the iridium layers on silicon. It is shown in this work that high quality iridium films with mosaic spread below 0.2 degrees can be grown on oxide buffer layers with a mosaic spread higher than 1 degrees. An averaging process during the coalescence of the iridium islands provides a plausible mechanism for this phenomenon. The oxide buffer and the iridium overlayers can be grown homogeneously on 4-inch wafers in a similar quality as for 1 x 1 cm(2) samples. Bias enhanced nucleation followed by 40 h growth on the large-area Ir/YSZ/Si(001) wafers yields diamond films with a mosaicity of 0.16 degrees (tilt) and 0.34 degrees (twist). For a further increase of the area of heteroepitaxial diamond nucleation the homogeneity of the plasma discharge has to be improved. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1035 / 1038

页数：4

共 23 条

[1] Growth of epitaxial diamond on silicon via iridium/SrTiO3 buffer layers [J].