Real-time monitoring of the Si carbonization process by a combined method of reflection high-energy electron diffraction and Auger electron spectroscopy

The carbonization process of a preferential-domain Si(001)2 x 1 surface with ethylene was investigated by a combined method of reflection high-energy electron diffraction and Auger electron spectroscopy. It is found that the carbonization process during the so-called incubation time is the Si1-xCx alloy formation before the nucleation of 3C-SiC grains. A reaction model for the Si1-xCx alloy formation and for the 3C-SiC grain growth is proposed for substrate temperatures of 600-750 degrees C. From the model, we postulate that the external supply of Si and C should be started just at the completion of the lateral 3C-SiC grain growth at temperatures of 600-650 degrees C in order to obtain thick 3C-SiC layers with a flat surface morphology. (C) 1999 American Institute of Physics. [S0003-6951(99)03326-4].