Core level photoemission study of As interaction with InP(110) and GaAs(110)

被引：2

作者：

He, ZQ ^{[1
]}

Khazmi, YO ^{[1
]}

Kanski, J ^{[1
]}

Ilver, L ^{[1
]}

Nilsson, PO ^{[1
]}

Karlsson, UO ^{[1
]}

机构：

[1] ROYAL INST TECHNOL, DEPT PHYS MAT PHYS, S-10044 STOCKHOLM, SWEDEN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1997年 / 15卷 / 03期

关键词：

D O I：

10.1116/1.580572

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present a comparative core level photoemission study of the interaction between As and the (110) surfaces of GaAs and InP. In both cases it is found that As forms well ordered overlayers with the periodicity of the substrate surface. The interactions in the two cases are, nonetheless, very different. The bonding at GaAs is very weak, and the adsorbed species desorbs below 100 degrees C. in contrast, the interaction with InP(110) is significantly stronger, and at temperatures around 330 degrees C an As-P exchange reaction is indicated and is seen the core level spectra. The latter data are interpreted in terms of a recently proposed structure model involving an As-covered InAs layer.(C) 1997 American Vacuum Society.

引用

页码：1515 / 1519

页数：5

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