Magnetoresistance in a room temperature ferromagnetic diluted magnetic semiconductor Zn1-xCrxTe

被引：20

作者：

Saito, H ^{[1
]}

Yamagata, S ^{[1
]}

Ando, K ^{[1
]}

机构：

[1] AIST, NanoElectr Res Inst, Tsukuba, Ibaraki 3058568, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 11期

关键词：

D O I：

10.1063/1.1687255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observed negative magnetoresistance (MR) in a ferromagnetic diluted magnetic semiconductor Zn1-xCrxTe (x=0.20). At a temperature of 20 K, the MR ratio was -26% (Deltarho=-4100 Omegacm) in a magnetic field of 10 kOe. The MR showed a clear hysteresis loop. Negative MR was observed up to about room temperature, corresponding to a Curie temperature. These behaviors indicate that the electrical properties of Zn1-xCrxTe are strongly affected by its magnetic properties through a strong carrier-spin interaction. (C) 2004 American Institute of Physics.

引用

页码：7175 / 7177

页数：3

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