High-dose oxygen ion implantation into 6H-SiC

被引:22
作者
Ishimaru, M [1 ]
Dickerson, RM
Sickafus, KE
机构
[1] Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA
[2] Kyushu Univ, Dept Mat Sci & Engn, Fukuoka 8128581, Japan
关键词
D O I
10.1063/1.124372
中图分类号
O59 [应用物理学];
学科分类号
摘要
Microstructures of oxygen ion implanted SiC have been examined using transmission electron microscopy (TEM) and scanning transmission electron microscopy equipped with an energy-dispersive x-ray spectrometer. 6H-SiC (0001) substrates were implanted with 180 keV oxygen ions at 650 degrees C to fluences of 0.7x10(18) and 1.4x10(18)/cm(2). A continuous buried oxide layer was formed in both samples, while the surrounding 6H-SiC contained minimal damage. These results suggest that oxygen implantation into SiC is a useful technique to establish SiC-on-insulator structures. In bright-field TEM images, the amorphous layer possessed uniform contrast in the low-dose sample, while it consisted of three distinct layers in the high-dose sample: (1) a bubbled or mottled layer; (2) a dark contrast layer; and (3) a light contrast layer. Chemical measurements revealed that the bubbled and light contrast regions have low silicon and oxygen contents, while carbon enrichment was found in these layers. (C) 1999 American Institute of Physics. [S0003-6951(99)02929-0].
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页码:352 / 354
页数:3
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