Homogeneous amorphization in high-energy ion implanted Si

被引：41

作者：

Motooka, T

Harada, S

Ishimaru, M

机构：

[1] Department of Materials Science and Engineering, Kyushu University, Fukuoka

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.78.2980

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have investigated amorphization mechanisms in 5 MeV Si+ ion implanted Si using cross-sectional transmission electron microscopy (XTEM) measurements. Both microdiffraction patterns and high-resolution XTEM images of the amorphous/crystalline (a/c) Si interface region indicate that the aic interface is very sharp and the amorphous Si transition occurs within a few atomic layers. Image simulations based on the divacancy and di-interstitial (D-D) pair model [Phys. Rev. B 49, 16 367 (1994)] suggest that an accumulation of the D-D pairs gives rise to homogeneous amorphization in ion implanted Si.

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页码：2980 / 2982

页数：3

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