Morphology of germanium nanowires grown in presence of B2H6 -: art. no. 043113

被引:47
作者
Tutuc, E [1 ]
Guha, S [1 ]
Chu, JO [1 ]
机构
[1] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
关键词
D O I
10.1063/1.2165089
中图分类号
O59 [应用物理学];
学科分类号
摘要
We study the Au-catalyzed chemical vapor growth of germanium (Ge) nanowires in the presence of di-borane (B2H6), serving as doping precursor. Our experiments reveal that, while undoped Ge nanowires can be grown epitaxially on Si(111) substrates with very long wire lengths, the B2H6 exposure renders the Ge nanowires significantly tapered. As we describe here, this peculiar morphology stems from the combination of the acicular, one-dimensional nanowire growth and a dramatically enhanced, B-induced conformal Ge deposition. The combination of acicular and conformal Ge growth mechanisms results in cone-shaped Ge nanostructures.
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页码:1 / 3
页数:3
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