Scanning tunneling spectroscopy of transition-metal-doped GaSb

被引：6

作者：

Hidalgo, P ^{[1
]}

Méndez, B

Piqueras, J

Dutta, PS

Dieguez, E

机构：

[1] Univ Complutense Madrid, Fac Fis, Dept Fis Mat, E-28040 Madrid, Spain

[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[3] Univ Autonoma Madrid, Dept Fis Mat, E-28049 Madrid, Spain

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.60.10613

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

V- and Ru-doped GaSb crystals have been investigated by scanning tunneling spectroscopy in a combined scanning electron microscope-scanning tunneling microscope system. Local variations of surface band gap have been measured with high spatial resolution. Precipitates in both kinds of doped samples show a nearly metallic behavior. The surface band gaps in the GaSb matrix have been found to depend on the dopant. [S0163-1829(99)06439-5].

引用

页码：10613 / 10615

页数：3

共 7 条

[1] The physics and technology of gallium antimonide: An emerging optoelectronic material [J].

Dutta, PS ;

Bhat, HL ;

Kumar, V .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (09) :5821-5870

[2] SCANNING TUNNELING SPECTROSCOPY [J].

FEENSTRA, RM .

SURFACE SCIENCE, 1994, 299 (1-3) :965-979

[3] TUNNELING SPECTROSCOPY OF THE SI(111)2X1 SURFACE [J].

FEENSTRA, RM ;

STROSCIO, JA ;

FEIN, AP .

SURFACE SCIENCE, 1987, 181 (1-2) :295-306

[4]

GEORGITSE EI, 1991, SOV PHYS SEMICOND+, V25, P1180

[5]

HAMMERS RJ, 1986, PHYS REV LETT, V56, P1972

[6] Luminescence properties of transition-metal-doped GaSb [J].

Hidalgo, P ;

Mendez, B ;

Dutta, PS ;

Piqueras, J ;

Dieguez, E .

PHYSICAL REVIEW B, 1998, 57 (11) :6479-6484

[7] Cathodoluminescence microscopy of doped GaSb crystals [J].

Mendez, B ;

Piqueras, J ;

Dutta, PS ;

Dieguez, E .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 42 (1-3) :38-42

← 1 →