Luminescence properties of transition-metal-doped GaSb

被引：27

作者：

Hidalgo, P ^{[1
]}

Mendez, B

Dutta, PS

Piqueras, J

Dieguez, E

机构：

[1] Univ Complutense Madrid, Fac Fis, Dept Fis Mat, E-28040 Madrid, Spain

[2] Rensselaer Polytech Inst, Dept Engn Mech, Troy, NY 12180 USA

[3] Univ Autonoma Madrid, Dept Fis Mat, E-28049 Madrid, Spain

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.57.6479

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The luminescence properties of transition-metal (Cr, V, and Ru)-doped GaSb single crystals have been studied by a cathodoluminescence (CL) technique in a scanning electron microscope. Spatial segregation of impurities along the longitudinal direction of the crystals grown by the Bridgman method has been investigated. These dopants suppress the native acceptor concentration to varying extent. The behavior of Ru has been found to be different from the behavior of V and Cr. In particular the complete disappearance of the 777 meV (band A) emission has been observed in GaSb:Ru with a low doping level. A peak at 767 meV is also seen in this sample which, to the best of our knowledge, has not been previously observed in GaSb. The CL results have been complemented by x-ray-microanalysis measurements to ascertain the effect of doping level on the luminescence properties.

引用

页码：6479 / 6484

页数：6

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