In-plane photoconductivity in amorphous silicon doping multilayers

被引:1
作者
Conde, JP
Silva, M
Chu, V
Gleskova, H
Vasanth, K
Wagner, S
Shen, DS
机构
[1] INST ENGN SISTEMAS & COMP,P-1000 LISBON,PORTUGAL
[2] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544
[3] UNIV ALABAMA,DEPT ELECT & COMP ENGN,HUNTSVILLE,AL 35899
[4] TECH UNIV MUNICH,DEPT PHYS E16,D-85747 GARCHING,GERMANY
[5] UNIV LJUBLJANA,FAC ELECT & COMP ENGN,LJUBLJANA 61000,SLOVENIA
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1996年 / 74卷 / 04期
关键词
D O I
10.1080/01418639608240338
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We prepared amorphous Si p-i-p-i and n-i-n-i doping multilayers to study their in-plane carrier transport and interfacial defect densities. The structures were grown using glow discharge or electron-cyclotron-resonance-enhanced chemical vapour deposition. We measured the following: composition by secondary-ion mass spectrometry; transport by dark conductivity sigma(d) and its thermal activation energy, by continuous-wave photoconductivity sigma(ph) as a function of intensity and wavelength, and also by photoconductive decay; defect density by photothermal deflection spectroscopy (PDS) and the constant-photocurrent method (CPM). sigma(d) is dominated by the doped layers. The intensity dependence of sigma(ph) suggests that it also is controlled by the doped layers. The fast component of the photoconductivity response time is comparable with that of the doped bulk. The PDS spectra of the multilayers are nearly identical with those of the bulk doped hydrogenated amorphous silicon. The pronounced wavelength dependence of sigma(ph) renders CPM sensitive to the i layer plus the p-i or n-i interfacial defects. The interfacial defects are produced by dopants carried over from the doped to the i layers. Their area density in the multilayers is proportional to the number of interfaces.
引用
收藏
页码:331 / 347
页数:17
相关论文
共 27 条
[1]   ON THE BIAS DEPENDENT SPECTRAL CHARACTERISTICS OF A-SI-H SOLAR-CELLS [J].
BRUNS, J ;
GALL, S ;
WAGEMANN, HG .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 :1193-1196
[2]   PROPERTIES OF AMORPHOUS SILICON/AMORPHOUS SILICON-GERMANIUM MULTILAYERS [J].
CONDE, JP ;
CHU, V ;
SHEN, DS ;
WAGNER, S .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (03) :1638-1655
[3]  
CURTINS H, 1989, AMORPHOUS SILICON RE, VA, P329
[4]   ELECTRON STATES IN CRYSTALS WITH NIPI-SUPERSTRUCTURE [J].
DOHLER, GH .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 52 (01) :79-&
[5]   DRIFT MOBILITY IN NORMAL-CONDUCTING AND PARA-CONDUCTING A-SI-H [J].
HOHEISEL, M ;
FUHS, W .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 57 (03) :411-419
[6]   CARRIER RECOMBINATION TIMES IN AMORPHOUS-SILICON DOPING SUPERLATTICES [J].
HUNDHAUSEN, M ;
LEY, L ;
CARIUS, R .
PHYSICAL REVIEW LETTERS, 1984, 53 (16) :1598-1601
[7]   DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J].
JACKSON, WB ;
AMER, NM .
PHYSICAL REVIEW B, 1982, 25 (08) :5559-5562
[8]   EXCITATION AND TEMPERATURE-DEPENDENCE OF THE PHOTOINDUCED EXCESS CONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SILICON [J].
KAKALIOS, J .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (03) :199-218
[9]  
Kakalios J., 1987, Disordered semiconductors, P529
[10]   PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SEMICONDUCTORS [J].
KAKALIOS, J ;
FRITZSCHE, H .
PHYSICAL REVIEW LETTERS, 1984, 53 (16) :1602-1605