Characterization and simulation of surface and line-edge roughness in photoresists

被引：21

作者：

Constandoudis, V

Gogolides, E ^{[1
]}

Patsis, GP

Tserepi, A

Valamontes, ES

机构：

[1] NCSR Demokritos, Inst Microelect, Aghia Paraskevi 15310, Greece

[2] Natl Tech Univ Athens, Dept Phys, GR-15773 Athens, Greece

[3] Technol Educ Inst Athens, Aegaleo 12210, Greece

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 06期

关键词：

D O I：

10.1116/1.1420582

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The problem of surface and line-edge roughness characterization and prediction is discussed. Different roughness parameters, such as the root mean square deviation (rms or sigma), the fractal dimension, and the Fourier spectrum, are presented and compared. These roughness parameters for three negative tone resists (wet and plasma developed) are analyzed versus exposure dose, photoacid generator concentration, and plasma development conditions. Finally, a molecular type simulator is used to predict the experimental roughness behavior. (C) 2001 American Vacuum Society.

引用

页码：2694 / 2698

页数：5

共 16 条

[1] Advanced epoxy novolac resist for fast high-resolution electron-beam lithography [J].

Argitis, P ;

Raptis, I ;

Aidinis, CJ ;

Glezos, N ;

Baciocchi, M ;

Everett, J ;

Hatzakis, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06) :3030-3034

[2] Line edge roughness of chemically amplified resists [J].

Azuma, T ;

Chiba, K ;

Imabeppu, M ;

Kawamura, D ;

Onishi, Y .

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2, 2000, 3999 :264-269

[3] EVALUATING THE FRACTAL DIMENSION OF PROFILES [J].

DUBUC, B ;

QUINIOU, JF ;

ROQUESCARMES, C ;

TRICOT, C ;

ZUCKER, SW .

PHYSICAL REVIEW A, 1989, 39 (03) :1500-1512

[4]

HASTINGS MH, 1994, FRACTALS

[5] Process dependence of roughness in a positive-tone chemically amplified resist [J].

He, D ;

Cerrina, F .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06) :3748-3751

[6] Area evaluation of microscopically rough surfaces [J].

Lai, L ;

Irene, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (01) :33-39

[7] Lithography and line-edge roughness of high activation energy resists [J].

Masuda, S ;

Ma, X ;

Noya, G ;

Pawlowski, G .

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2, 2000, 3999 :252-263

[8] QUANTITATIVE TOPOGRAPHIC ANALYSIS OF FRACTAL SURFACES BY SCANNING TUNNELING MICROSCOPY [J].

MITCHELL, MW ;

BONNELL, DA .

JOURNAL OF MATERIALS RESEARCH, 1990, 5 (10) :2244-2254

[9] Influence of edge roughness in resist patterns on etched patterns [J].

Namatsu, H ;

Nagase, M ;

Yamaguchi, T ;

Yamazaki, K ;

Kurihara, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06) :3315-3321

[10] Surface and line-edge roughness in solution and plasma developed negative tone resists: Experiment and simulation [J].

Patsis, GP ;

Tserepi, A ;

Raptis, I ;

Glezos, N ;

Gogolides, E ;

Valamontes, ES .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06) :3292-3296

← 1 2 →