Missing-dimer structures and their kink defects on molecular beam epitaxially grown (2x4) reconstructed (001)InP and GaAs surfaces studied by ultrahigh-vacuum scanning tunneling microscopy

被引：9

作者：

Ishikawa, Y ^{[1
]}

Fukui, T ^{[1
]}

Hasegawa, H ^{[1
]}

机构：

[1] HOKKAIDO UNIV,GRAD SCH ELECT & INFORMAT ENGN,SAPPORO,HOKKAIDO 060,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 3B期

关键词：

InP; GaAs; scanning tunneling microscopy; X-ray photoelectron spectroscopy; surface reconstruction; (2 x 4); kink defect; surface state; Fermi level pinning;

D O I：

10.1143/JJAP.36.1749

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InP and GaAs(001)-(2 x 4) reconstructed surfaces prepared by molecular beam epitaxy (MBE) mere studied by ultrahigh-vacuum scanning tunneling microscopy (UHV-STM) in combination with X-ray photoelectron spectroscopy (XPS). It was found that the missing dimers and their kink defects on InP have remarkably different properties from those of GaAs. Based on this finding, a new missing-dimer structure is proposed for InP (2 x 4) surfaces. As to the kink defects, no correlation was found on InP between the kink defect density and the Si doping level, although the XPS peaks clearly showed existence of Fermi level pinning. Thus, the model proposed recently by Pashley ct al. does not apply to the InP surface.

引用

页码：1749 / 1755

页数：7

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