Refractive index and hygroscopic stability of AlxGa1-xAs native oxides

被引:16
作者
Hall, DC [1 ]
Wu, H
Kou, L
Luo, Y
Epstein, RJ
Blum, O
Hou, H
机构
[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
关键词
D O I
10.1063/1.124612
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present prism coupling measurements on AlxGa1-xAs native oxides showing the dependence of refractive index on composition (0.3 less than or equal to x less than or equal to 0.97), oxidation temperature (400 less than or equal to T less than or equal to 500), and carrier gas purity. Index values range from n = 1.490 (x = 0.9, 400 degrees C) to 1.707 (x = 0.3, 500 degrees C). The oxides are shown to adsorb moisture, increasing their index by up to 0.10 (7%). Native oxides of AlxGa1-xAs (x less than or equal to 0.5) have index values up to 0.27 higher and are less hygroscopic when prepared with a small amount of O-2 in the N-2+H2O process gas. The higher index values are attributed to a transition from a hydroxide to a denser (AlxGa1-x)(2)O-3 oxide phase. (C) 1999 American Institute of Physics. [S0003-6951(99)00434-9].
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页码:1110 / 1112
页数:3
相关论文
共 15 条
[1]   A study of wet oxidized A1xGa1-xAs for integrated optics [J].
Bek, A ;
Aydinli, A ;
Champlain, JG ;
Naone, R .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (04) :436-438
[2]   WET THERMAL-OXIDATION OF ALXGA1-XAS COMPOUNDS [J].
BURTON, RS ;
SCHLESINGER, TE .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (09) :5503-5507
[3]   Advances in selective wet oxidation of AlGaAs alloys [J].
Choquette, KD ;
Geib, KM ;
Ashby, CIH ;
Twesten, RD ;
Blum, O ;
Hou, HQ ;
Follstaedt, DM ;
Hammons, BE ;
Mathes, D ;
Hull, R .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) :916-926
[4]   HYDROLYZATION OXIDATION OF ALXGA1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURES AND SUPERLATTICES [J].
DALLESASSE, JM ;
HOLONYAK, N ;
SUGG, AR ;
RICHARD, TA ;
ELZEIN, N .
APPLIED PHYSICS LETTERS, 1990, 57 (26) :2844-2846
[5]   Angular spectroscopic analysis: An optical characterization technique for laterally oxidized AlGaAs layers [J].
Heremans, P ;
Kuijk, M ;
Windisch, R ;
Vanderhaegen, J ;
DeNeve, H ;
Vounckx, R ;
Borghs, G .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) :5265-5267
[6]   THE SYSTEM ALUMINA GALLIA WATER [J].
HILL, VG ;
ROY, R ;
OSBORN, EF .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1952, 35 (06) :135-142
[7]   Optical constants of (Al0.98Ga0.02)xOy native oxides [J].
Knopp, KJ ;
Mirin, RP ;
Christensen, DH ;
Bertness, KA ;
Roshko, A ;
Synowicki, RA .
APPLIED PHYSICS LETTERS, 1998, 73 (24) :3512-3514
[8]   Design and fabrication of VCSEL's with AlxOy-GaAs DBR's [J].
MacDougal, MH ;
Dapkus, PD ;
Bond, AE ;
Lin, CK ;
Geske, J .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) :905-915
[9]  
MISRA C, 1986, IND ALUMINA CHEM, P12
[10]   GA2O3 FILMS FOR ELECTRONIC AND OPTOELECTRONIC APPLICATIONS [J].
PASSLACK, M ;
SCHUBERT, EF ;
HOBSON, WS ;
HONG, M ;
MORIYA, N ;
CHU, SNG ;
KONSTADINIDIS, K ;
MANNAERTS, JP ;
SCHNOES, ML ;
ZYDZIK, GJ .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (02) :686-693