Analysis of radiation effects on silicon strip detectors in the NA50 experiment

被引：6

作者：

Alessandro, B

Beolé, S

Bonazzola, G

Crescio, E

Dabrowski, W

Giubellino, P

Grybos, P

Idzik, M

Martinetto, M

Marzari-Chiesa, A

Masera, M

Prino, F

Ramello, L

Mendes, PR

Riccati, L

Sitta, M

机构：

[1] Ist Nazl Fis Nucl, I-10125 Turin, Italy

[2] UMM, Fac Phys & Nucl Tech, Krakow, Poland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 432卷 / 2-3期

关键词：

D O I：

10.1016/S0168-9002(99)00462-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

During the operation of the Multiplicity Detector in the NA50 experiment the single sided AC-coupled p-on-n silicon strip detectors were exposed to charged particle fluences resulting in an equivalent 1 MeV neutron fluence up to 10(14) eq, n/cm(2) and a total ionising dose up to 20 Mrad, with a very non-uniform radiation spatial distribution. In this paper detailed analysis of radiation effects observed on the detectors during the 1996 lead ion run as well as results of measurements performed after the run are presented. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：342 / 357

页数：16

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