Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs

被引：20

作者：

Kordos, P

Marso, M

Forster, A

Darmo, J

Betko, J

Nimtz, G

机构：

[1] SLOVAK ACAD SCI, INST ELECT ENGN, SK-84239 BRATISLAVA, SLOVAKIA

[2] UNIV COLOGNE, INST PHYS 2, D-50937 COLOGNE, GERMANY

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 08期

关键词：

D O I：

10.1063/1.119745

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current transport in low-temperature (LT) molecular-beam epitaxial GaAs grown at 200-300 degrees C on an n(+) GaAs substrate is studied by means of current-voltage-temperature characteristics, The resistivity of LT GaAs at low electric fields is rho greater than or equal to 10(8) Ohm cm, much higher than resulting from van der Pauw measurements, It is found that the measured resistivity decreases with increasing the LT GaAs thickness. This is explained by space-charge effect in the vicinity of n(+)/LT GaAs junction and subsequent suppression of hopping conduction in the high-field junction region. (C) 1997 American Institute of Physics.

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页码：1118 / 1120

页数：3

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