MECHANISM RESPONSIBLE FOR THE SEMIINSULATING PROPERTIES OF LOW-TEMPERATURE-GROWTH GAAS - COMMENT

被引：4

作者：

MELLOCH, MR ^{[1
]}

WOODALL, JM ^{[1
]}

机构：

[1] PURDUE UNIV,MRSEC TECHNOL ENABLING HETEROSTRUCT MAT,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 09期

关键词：

D O I：

10.1063/1.114530

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1331 / 1332

页数：2

共 13 条

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[5] MECHANISM RESPONSIBLE FOR THE SEMIINSULATING PROPERTIES OF LOW-TEMPERATURE-GROWN GAAS [J].

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[9] FORMATION OF ARSENIC PRECIPITATES IN GAAS BUFFER LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE TEMPERATURES [J].

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[10] GAAS, ALGAAS, AND INGAAS EPILAYERS CONTAINING AS CLUSTERS - SEMIMETAL/SEMICONDUCTOR COMPOSITES [J].

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