Structure and electrical transport properties of bismuth thin films prepared by RF magnetron sputtering

被引：67

作者：

Kim, DH ^{[1
]}

Lee, SH ^{[1
]}

Kim, JK ^{[1
]}

Lee, GH ^{[1
]}

机构：

[1] KIMM, Dept Surface Engn, Adv Thin Film Grp, Chang Won 641010, Kyungnam, South Korea

来源：

APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 10期

关键词：

bismuth; thermoelectric thin film; electrical transport properties; sputtering;

D O I：

10.1016/j.apsusc.2005.05.046

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Bismuth thin films were prepared on glass substrates with RF magnetron sputtering and the effects of deposition temperature on surface morphology and their electrical transport properties were investigated. Grain growth of bismuth and the coalescence of grains were observed above 393 K with field emission secondary electron microscopy. Continuous thin films could not be obtained above 448 K because of the segregation of grains. Hall effect measurements showed that substrate heating yields the decrease of carrier density and the increase of mobility in exponential ways until 403 K. Resistivity of sputter deposited bismuth films has its minimum (about 0.7 x 10(-3) Omega cm) in range of 403-433 K. Annealing of bismuth films deposited at room temperature was carried out in a radiation furnace with flowing hydrogen gas. The change of resistivity was not significant due to the cancellation of the decrease of carrier density and the increase of mobility. However, the abrupt change of electrical properties of film annealed above 523 K was observed, which is caused by the oxidation of bismuth layer. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：3525 / 3531

页数：7

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