Unusual growth of pulsed laser deposited bismuth films on Si(100)

被引：23

作者：

Dauscher, A ^{[1
]}

Boffoué, MO ^{[1
]}

Lenoir, B ^{[1
]}

Martin-Lopez, R ^{[1
]}

Scherrer, H ^{[1
]}

机构：

[1] Ecole Mines, UMR CNRS INPL UHP 7556, Phys Mat Lab, F-54042 Nancy, France

来源：

APPLIED SURFACE SCIENCE | 1999年 / 138卷

关键词：

pulsed laser deposition; bismuth films; growth conditions; X-ray diffraction; transmission electron microscopy;

D O I：

10.1016/S0169-4332(98)00420-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Pulsed laser deposition of bismuth films was performed from a Nd:YAG laser (lambda = 532 nm) in a high vacuum chamber onto glass or Si(100) substrates. The influences of deposition temperature and deposition duration on thr: film growth were checked on both substrates. The films were characterised by scanning electron microscopy. transmission electron microscopy, atomic force microscopy and X-ray diffraction. Unusual growth was observed at the beginning of the process with films deposited on Si(100) at low and high temperature as compared to glass and also to more conventional deposition techniques. The strong texture observed for room temperature deposited films and the: increase of rate growth as compared with glass are discussed in terms of epitaxial growth. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：188 / 194

页数：7

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