The band-gap bowing of AlxGa1-xN alloys

被引：179

作者：

Lee, SR ^{[1
]}

Wright, AF ^{[1
]}

Crawford, MH ^{[1
]}

Petersen, GA ^{[1
]}

Han, J ^{[1
]}

Biefeld, RM ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 22期

关键词：

D O I：

10.1063/1.123339

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The band gap of AlxGa1-xN is measured for the composition range 0 less than or equal to x<0.45; the resulting bowing parameter, b=+0.69 eV, is compared to 20 previous works. A correlation is found between the measured band gaps and the methods used for epitaxial growth of the AlxGa1-xN:directly nucleated or buffered growths of AlxGa1-xN initiated on sapphire at temperatures T>800 degrees C usually lead to stronger apparent bowing (b>+1.3 eV); while growths initiated using low-temperature buffers on sapphire, followed by high-temperature growth, lead to weaker bowing (b<+1.3 eV). Extant data suggest that the intrinsic band-gap bowing parameter for AlGaN alloys is b=+0.62(+/-0.45) eV. (C) 1999 American Institute of Physics. [S0003-6951(99)02822-3].

引用

页码：3344 / 3346

页数：3

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