The electroformed metal-insulator-metal structure: a comprehensive model

被引：64

作者：

Thurstans, RE ^{[1
]}

Oxley, DP ^{[1
]}

机构：

[1] De Montfort Univ, Sch & Engn Res Ctr, Emerging Technol Res Ctr, Leicester LE1 9BH, Leics, England

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2002年 / 35卷 / 08期

关键词：

D O I：

10.1088/0022-3727/35/8/312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new model is presented of the electroformed rnetal-insulator-metal structure which explains its various properties including electron emission, electroluminescence. memory effects and, for the first time, a complete account of the differential negative resistance. The model is based upon experiments which identify the conduction process to be trap-controlled thermally activated tunnelling between metal islands produced in the forming process. The implications for the production of commercial electroformed devices are discussed.

引用

页码：802 / 809

页数：8

共 23 条

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