A tunable blue light emission of InGaN GaN quantum well through thermal interdiffusion

被引：9

作者：

Chan, MCY ^{[1
]}

Cheung, EMT ^{[1
]}

Li, EH ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 59卷 / 1-3期

关键词：

thermal annealing; quantum well intermixing; interdiffusion; III-nitride; InGaN GaN; light emitting diode;

D O I：

10.1016/S0921-5107(98)00342-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In recent years, blue light emitting diodes and lasers of III-nitride semiconductors have been of much interest. This is mainly due to its large bandgap ranging from 1.89 eV (wurtzite InN) to 3.42 eV (wurtzite GaN). InGaN/GaN quantum well (QW) structures have been used to achieve high lumens blue LEDs. Tn this paper, InGaN/GaN QW intermixing structure is theoretically analyzed and is used to optimize and tune the optical emission. (C) 1999 Published by Elsevier Science S.A. All rights reserved.

引用

页码：283 / 287

页数：5

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