3 nm NiCr wires made using electron beam lithography and PMMA resist

被引:25
作者
Cumming, DRS
Thoms, S
Weaver, JMR
Beaumont, SP
机构
[1] Nanoelectronics Research Centre, Dept. of Electronics and Elec. Eng., University of Glasgow, Glasgow
关键词
D O I
10.1016/0167-9317(95)00278-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate the fabrication of sub -5 nm NiCr wires using conventional 100 kV electron beam lithography and PMMA resist technology. The wires are short, and widen to continuous 20 nm wires at either end. The ultra high resolution is achieved using a novel exposure technique. These wires are believed to be the smallest features yet mane using this technology.
引用
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页码:423 / 425
页数:3
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