A JEOL 100 CXII CONVERTED FOR USE AS AN ELECTRON-BEAM LITHOGRAPHY SYSTEM

被引：9

作者：

THOMS, S

BEAUMONT, SP

WILKINSON, CDW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期

关键词：

D O I：

10.1116/1.584673

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1823 / 1826

页数：4

共 6 条

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[2] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY
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[3] GRATING LENSES FOR INTEGRATED-OPTICS
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[4] ELECTRON-BEAM LITHOGRAPHY FROM 20 TO 120 KEV WITH A HIGH-QUALITY BEAM
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1101 - 1104
[5] POINT EXPOSURE DISTRIBUTION MEASUREMENTS FOR PROXIMITY CORRECTION IN ELECTRON-BEAM LITHOGRAPHY ON A SUB-100 NM SCALE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 135 - 141
[6] SUHURA T, 1986, IEEE J QUANTUM ELECT, V22, P845