Effect of oxygen plasma exposure of porous spin-on-glass films

被引：75

作者：

Kondoh, E

Asano, T

Nakashima, A

Komatu, M

机构：

[1] Kyushu Inst Technol, Ctr Microelect Syst, Iizuka, Fukuoka 8208502, Japan

[2] Catalysts & Chem Ind Co Ltd, Fine CHem Res Ctr, Kitakyushu, Fukuoka 8080027, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.591374

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogen-methyl-siloxane-based porous spin-on-glass films were exposed to an oxidative plasma. The plasma exposure resulted in the loss of hydrophobic groups such as Si-H and Si-CH3. The formation of silanole groups, the decrease in film thickness, and moisture uptake were also observed. When the substrate was biased during exposure, these tendencies were found to be suppressed. (C) 2000 American Vacuum Society. [S0734-211X(00)03603-9].

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页码：1276 / 1280

页数：5

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