In situ infrared characterization of the silicon surface in hydrofluoric acid

被引：22

作者：

Chazalviel, JN

Ozanam, F

机构：

[1] Lab. de Phys. de la Matiere Cond., CNRS, École Polytechnique, 91128 Palaiseau, Route de Saclay

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 11期

关键词：

D O I：

10.1063/1.365348

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface of silicon in hydroflouric acid (HF) is coated with covalently attached hydrogen (SiHx groups, with x = 1,2,3), with probably a very small concentration of SiF bands. In contrast with a recent claim by Niwano et al. [J. Appl. Phys. 79, 3708 (1996)], we show that the concentration of SiF bonds is as yet beyond infrared detection limits. Our analysis indicates that the band at 2230 cm(-1) observed by these authors actually arises from electrolyte absorption. (C) 1997 American Institute of Physics.

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页码：7684 / 7686

页数：3

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