Mechanistic framework for dry etching, beam assisted etching and tribochemical etching

被引:9
作者
vanDelft, FCMJM
机构
[1] Philips Research Laboratories, Microfabrication Centre, 5656 AA Eindhoven
关键词
D O I
10.1016/0167-9317(95)00264-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A mechanistic framework is presented for impact assisted etch reactions. The consecutive reaction steps are assumed to be activated thermally and in parallel mechanically by fast particle impacts. The model explains the complicated temperature dependencies observed in dry etching and beam assisted etching, acid it correlates the side wall profiles to the rate determining steps in the etch mechanisms. The framework is used to describe Reactive Ion Beam Etching (RIBE) experiments on InP with Ar+ ions and chlorine, in comparison with our recent Reactive Ion Etching (RIE) experiments of magnetic alloys in HCl plasmas. The framework is also applicable to other non-thermally activated etch reactions, as encountered in tribe-chemical etching and laser chemical etching.
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页码:361 / 364
页数:4
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