The use of oxynitrides for the fabrication of buried contact silicon solar cells

被引:6
作者
Ebong, AU
Taouk, M
Honsberg, CB
Wenham, SR
机构
[1] Ctr. Photovoltaic Devices and Syst., Sch. of Elec. Eng. and Comp. Science, University of New South Wales, Kensington, NSW 2033
基金
澳大利亚研究理事会;
关键词
D O I
10.1016/0927-0248(95)00086-0
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The formation of an oxynitride layer for use with solar cells has been demonstrated using simple equipment designed and assembled by the authors. The oxynitride has been successfully incorporated into the double sided buried contact silicon solar cells sequence, solving the fabrication difficulties associated with the use of an oxide masking layer. The output parameters, particularly the open-circuit voltage, are lower than those demonstrated by the use of a thick silicon dioxide film when working with conventional cell structures. This has been attributed to the inferior surface passivation qualities of the oxynitride. However, the oxynitride films are suitable for other devices like the multi-layer thin crystalline silicon buried contact structure [40].
引用
收藏
页码:183 / 195
页数:13
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