Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design

被引：23

作者：

Shen, L ^{[1
]}

Coffie, R ^{[1
]}

Buttari, D ^{[1
]}

Heikman, S ^{[1
]}

Chakraborty, A ^{[1
]}

Chini, A ^{[1
]}

Keller, S ^{[1
]}

Denbaars, SP ^{[1
]}

Mishra, UK ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2004年 / 33卷 / 05期

关键词：

GaN/AlGaN/GaN; HEMTs; modulation-doped field-effect transistor (MODFET); microwave-power field-effect transistor; radio-frequency dispersion; passivation;

D O I：

10.1007/s11664-004-0195-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a novel GaN/AlGaN/GaN high electron mobility transistor (HEMT) is discussed. The device uses a thick GaN-cap layer (similar to250 nm) to reduce the effect of surface potential fluctuations on device performance. Devices without Si3N4 passivation showed no dispersion with 200-ns-pulse-width gate-lag measurements. Saturated output-power density of 3.4 W/mm and peak power-added efficiency (PAE) of 32% at 10 GHz (V-DS = + 15 V) were achieved from unpassivated devices on sapphire substrates. Large gate-leakage current and low breakdown voltage prevented higher drain-bias operation and are currently under investigation.

引用

页码：422 / 425

页数：4

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