Improved quality factor spiral inductors on GaAs substrates

被引：28

作者：

Bahl, IJ ^{[1
]}

机构：

[1] ITT GaAsTEK, Roanoke, VA 24019 USA

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1999年 / 9卷 / 10期

关键词：

improved Q; monolithic inductors; spiral inductors; variable width;

D O I：

10.1109/75.798028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present test data for several spiral inductors with improved quality factors fabricated on GaAs substrates. It has been shown experimentally that the quality factor of spiral inductors can be increased by reducing magnetically induced currents and by narrowing the line width of the inner turns similar to the one reported for silicon micromachined inductor [1], Using this technique, we observed about 22% improvement in the quality factor of spiral inductors as compared to standard spiral inductors having constant line width.

引用

页码：398 / 400

页数：3

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