Electrical and optical transport of GaAs/carbon nanotube heterojunctions

被引：54

作者：

Liang, Chen-Wei ^{[1
]}

Roth, Siegmar ^{[1
]}

机构：

[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

来源：

NANO LETTERS | 2008年 / 8卷 / 07期

关键词：

D O I：

10.1021/nl0802178

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Heterojunctions consisting of nanotubes and an industrialized semiconductor-GaAs have been produced, and their transport properties were studied. We found that the p-doped GaAs forms an ohmic contact with a nanotube but the n-doped GaAs/nanotube heterojunction is rectifying. Analysis of measurement results at various temperatures shows that tunneling transport plays an important role. We also observed photovoltaic effects in n-GaAs/nanotube junction with the illumination of a green laser or desk lamp.

引用

页码：1809 / 1812

页数：4

共 23 条

[1] Charge transfer on the nanoscale: Current status [J].

Adams, DM ;

Brus, L ;

Chidsey, CED ;

Creager, S ;

Creutz, C ;

Kagan, CR ;

Kamat, PV ;

Lieberman, M ;

Lindsay, S ;

Marcus, RA ;

Metzger, RM ;

Michel-Beyerle, ME ;

Miller, JR ;

Newton, MD ;

Rolison, DR ;

Sankey, O ;

Schanze, KS ;

Yardley, J ;

Zhu, XY .

JOURNAL OF PHYSICAL CHEMISTRY B, 2003, 107 (28) :6668-6697

[2] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[3] Tunneling versus thermionic emission in one-dimensional semiconductors [J].

Appenzeller, J ;

Radosavljevic, M ;

Knoch, J ;

Avouris, P .

PHYSICAL REVIEW LETTERS, 2004, 92 (04) :4

[4]

AVOURIS P, 2004, MRS BULL, V29, P430

[5] Temperature dependence of the band gap of semiconducting carbon nanotubes [J].

Capaz, RB ;

Spataru, CD ;

Tangney, P ;

Cohen, ML ;

Louie, SG .

PHYSICAL REVIEW LETTERS, 2005, 94 (03)

[6] Carbon nanotube quantum resistors [J].

Frank, S ;

Poncharal, P ;

Wang, ZL ;

de Heer, WA .

SCIENCE, 1998, 280 (5370) :1744-1746

[7] Photoelectrochemical cells [J].

Grätzel, M .

NATURE, 2001, 414 (6861) :338-344

[8] Ballistic carbon nanotube field-effect transistors [J].

Javey, A ;

Guo, J ;

Wang, Q ;

Lundstrom, M ;

Dai, HJ .

NATURE, 2003, 424 (6949) :654-657

[9]

JAVEY A, 2003, IEEE INT ELECT DEVIC

[10] Hybrid devices from single wall carbon nanotubes epitaxially grown into a semiconductor heterostructure [J].

Jensen, A ;

Hauptmann, JR ;

Nygård, J ;

Sadowski, J ;

Lindelof, PE .

NANO LETTERS, 2004, 4 (02) :349-352

← 1 2 3 →