Electric field dependent structural and vibrational properties of the Si(100)-H(2 x 1) surface and its implications for STM induced hydrogen desorption

被引:20
作者
Stokbro, K [1 ]
机构
[1] Tech Univ Denmark, Mikroelekt Ctr, DK-2800 Lyngby, Denmark
关键词
ab initio quantum chemical methods and calculations; adatoms; field effect; hydrogen; low index single crystal surfaces; semiconducting surfaces; silicon; tunneling; vibrations of adsorbed molecules;
D O I
10.1016/S0039-6028(99)00396-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report a first principles study of the structure and the vibrational properties of the Si(100)-H(2 x 1) surface in an electric field. The calculated vibrational parameters are used to model the vibrational modes in the presence of the electric field corresponding to a realistic scanning tunneling microscopy tip-surface geometry. We find that local one-phonon excitations have short lifetimes (10 ps at room temperature) due to incoherent lateral diffusion, while diffusion of local multi-phonon excitations are suppressed due to anharmonic frequency shifts and have much longer lifetimes (10 ns at room temperature). We calculate the implications for current induced desorption of H using a recently developed first principles model of electron inelastic scattering. The calculations show that inelastic scattering events with energy transfer n (h) over bar omega, where n>1, play an important role in the desorption process. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:327 / 337
页数:11
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