High-resolution scanning capacitance microscopy of silicon devices by surface beveling

High-resolution scanning capacitance measurements were carried out magnifying the sample dimensions by a double beveling method. A magnification of ten times has been reached, but in principle even higher magnifications can be obtained. For depth magnifications the reverse junction carrier spilling has to be considered. The measurements indicate that the amount of the spilling effect is in agreement with the models developed to date. The method was successfully applied directly to silicon devices and it demonstrates that accuracy well below tip dimensions can be easily reached. Junction depths as well as channel lengths can be determined with a high resolution. (C) 2000 American Institute of Physics. [S0003-6951(00)01618-1].