Application of a semiconductor tip to capacitance microscopy

被引：9

作者：

Goto, K ^{[1
]}

Hane, K ^{[1
]}

机构：

[1] Tohoku Univ, Dept Mechatron & Precis Engn, Sendai, Miyagi 98077, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 04期

关键词：

D O I：

10.1063/1.121927

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A semiconductor tip has been applied to the scanning capacitance microscopy (SCM). Local electrostatic fields are measured through depletion of carriers at the tip end. A Si microcantilever with the sharp end is employed. This SCM technique has been used in a capacitance observation of a dielectric/electrode sample. Potentiometry using this technique is demonstrated in an experiment of charge injection recording on a polymer film. (C) 1998 American Institute of Physics.

引用

页码：544 / 546

页数：3

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